DIM800DCM12-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 1/10 www.dynexsemi.com features 10 s short circuit withstand high thermal cycling capability non punch through silicon isolated mmc base with aln substrates applications inverters motor controllers traction drives the powerline range of modules includes half bridge, dual, chopper, bi-directional and single switch configurations covering voltages from 600v to 3300v and currents up to 2400a. the DIM800DCM12-A000 is a 1200v, n channel enhancement mode insulated gate bipolar transistor (igbt) chopper module. the igbt has a wide reverse bias safe operating area (rbsoa) plus full 10 s short circuit withstand. this module is optimised for applications requiring high thermal cycling capability. the module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ordering information order as: DIM800DCM12-A000 note: when ordering, please use the whole part number. key parameters v ces 1200v v ce(sat) * (typ) 2.2v i c (max) 800a i c(pk) (max) 1600a *(measured at the power busbars and not the auxiliary terminals) DIM800DCM12-A000 igbt chopper module replaces july 2002 version ds5548-2.0 ds5548- fig. 1 chopper circuit diagram fig. 2 electrical connections - (not to scale) outline type code: d (see package details for further information) 3(c1) 5(e 1 ) 6(g 1 ) 7(c 1 ) 1(e1) 4(e2) 2(c2)
DIM800DCM12-A000 2/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v - t case = 85?c 1ms, t case = 115?c t case = 25?c, t j = 150?c v r = 0, t p = 10ms, t vj = 125?c commoned terminals to base plate. ac rms, 1 min, 50hz iec1287. v 1 = 1800v, v 2 = 1300v, 50hz rms symbol v ces v ges i c i c(pk) p max i 2 t v isol q pd absolute maximum ratings - per arm stresses above those listed under 'absolute maximum ratings' may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety prec autions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25?c unless stated otherwise units v v a a w ka 2 s ka 2 s v pc max. 1200 20 800 1600 6940 100 225 2500 10 parameter collector-emitter voltage gate-emitter voltage continuous collector current peak collector current max. transistor power dissipation diode i 2 t value (igbt arm) diode i 2 t value (diode arm) isolation voltage - per module partial discharge - per module
DIM800DCM12-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 3/10 www.dynexsemi.com test conditions continuous dissipation - junction to case continuous dissipation - junction to case mounting torque 5nm (with mounting grease) transistor diode - mounting - m6 electrical connections - m4 electrical connections - m8 parameter thermal resistance - transistor (per arm) thermal resistance - diode (igbt arm) thermal resistance - diode (diode arm) thermal resistance - case to heatsink (per module) junction temperature storage temperature range screw torque thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 20mm clearance: 10mm cti (critical tracking index): 175 symbol r th(j-c) r th(j-c) r th(c-h) t j t stg - units ?c/kw ?c/kw ?c/kw ?c/kw ?c ?c ?c nm nm nm max. 18 40 26.7 8 150 125 125 5 2 10 typ. - - - - - - - - - - min. - - - - - - ?0 - - -
DIM800DCM12-A000 4/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com test conditions v ge = 0v, v ce = v ces v ge = 0v, v ce = v ces , t case = 125?c v ge = 20v, v ce = 0v i c = 40ma, v ge = v ce v ge = 15v, i c = 800a v ge = 15v, i c = 800a, , t case = 125?c dc t p = 1ms i f = 800a i f = 800a, t case = 125?c v ce = 25v, v ge = 0v, f = 1mhz - - t j = 125?c, v cc = 900v, i 1 t p 10 s, v ce(max) = v ces ?l*. di/dt i 2 iec 60747-9 parameter collector cut-off current gate leakage current gate threshold voltage collector-emitter saturation voltage diode forward current diode maximum forward current diode forward voltage (igbt arm) diode forward voltage (diode arm) diode forward voltage (igbt arm) diode forward voltage (diode arm) input capacitance module inductance - per arm internal transistor resistance - per arm short circuit. i sc electrical characteristics t case = 25?c unless stated otherwise. symbol i ces i ges v ge(th) v ce(sat) ? i f i fm v f ? c ies l m r int sc data units ma ma a v v v a a v v v v nf nh m ? a a max. 1 25 4 6.5 2.8 3.2 800 1600 2.4 2.1 2.4 2.0 - - - - - typ. - - - 5.5 2.2 2.6 - - 2.1 1.8 2.1 1.7 90 20 0.27 5500 4500 min. - - - 4.5 - - - - - - - - - - - note: ? measured at the power busbars and not the auxiliary terminals) * l is the circuit inductance + l m
DIM800DCM12-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 5/10 www.dynexsemi.com units ns ns mj ns ns mj c c a mj max. - - - - - - - - - - typ. 1250 170 130 250 250 80 9 80 380 30 min. - - - - - - - - - - test conditions i c = 800a v ge = 15v v ce = 600v r g(on) = r g(off) = 2.7 ? l ~ 100nh i f = 800a, v r = 600v, di f /dt = 4200a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery energy electrical characteristics t case = 25?c unless stated otherwise symbol t d(off) t f e off t d(on) t r e on q g q rr i rr e rec t case = 125?c unless stated otherwise units ns ns mj ns ns mj c a mj max. - - - - - - - - - typ. 1500 200 160 400 220 120 160 450 60 min. - - - - - - - - - test conditions i c = 800a v ge = 15v v ce = 600v r g(on) = r g(off) = 2.7 ? l ~ 100nh i f = 800a, v r = 600v, di f /dt = 4000a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss diode reverse recovery charge diode reverse current diode reverse recovery energy symbol t d(off) t f e off t d(on) t r e on q rr i rr e rec
DIM800DCM12-A000 6/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com typical characteristics fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance 0 20 40 60 80 100 120 140 160 180 0 200 400 600 800 1000 collector current, i c - (a) switching energy, e sw - (mj) e on e off e rec t c = 125?c, v ce = 600v, r g = 2.7 0 50 100 150 200 250 300 350 261012 gate resistance, r g - (ohms) switching energy, e sw - (mj) 48 e on e off e rec t c = 125?c, v ce = 600v, i c = 800a 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 25?c v ce is measured at power busbars and not the auxiliary terminals 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 collector-emitter voltage, v ce - (v) collector current, i c - (a) v ge = 10v v ge = 12v v ge = 15v v ge = 20v common emitter t case = 125?c v ce is measured at power busbars and not the auxiliary terminals
DIM800DCM12-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 7/10 www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 di ode reverse bias safe operating area 0 200 400 600 800 1000 1200 1400 1600 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 forward voltage, v f - (v) forward current, i f - (a) t j = 25?c t j = 125?c v f is measured at power busbars and not the auxiliary terminals 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 200 400 600 800 1000 1200 1400 collector emitter voltage, v ce - (v) collector current, i c - (a) t case = 125?c v ge =15v r g = 2.7ohms module i c chip i c 0 100 200 300 400 500 600 700 800 900 1000 0 200 400 600 800 1000 1200 1400 reverse voltage, v r - (v) reverse current, i r - (a) t j = 125?c antiparallel diode freewheel diode fig. 10 dc current rating vs case temperature 0 200 100 400 600 800 1000 1200 1300 300 500 700 900 1100 1400 1500 0 20 40 60 80 100 120 140 160 case temperature, t case - (?c) dc collector current, i c - (a)
DIM800DCM12-A000 8/10 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 11 transient thermal impedance 0.1 1 10 100 0.001 0.01 1 0.1 10 pulse width, t p - (s) transient thermal impedance, z th (j-c) - (c/kw ) transistor antiparallel diode freewheel diode igbt r i (?c/kw) t i (ms) antiparallel diode r i (?c/kw) t i (ms) freewheel diode r i (?c/kw) t i (ms) 1 0.56 0.12 1.23 0.11 0.82 0.11 2 4.00 3.89 9.26 4.24 6.17 4.24 3 5.64 47.15 12.96 48.75 8.64 48.75 4 7.81 257.21 16.53 256.75 11.02 256.75
DIM800DCM12-A000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. 9/10 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated o therwise. do not scale. nominal weight: 1050g module outine type code: d
www.dynexsemi.com power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. using the latest cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks the power assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of dynex semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer services. customer service tel: +44 (0)1522 502753 / 502901. fax: +44 (0)1522 500020 ? dynex semiconductor 2003 technical documentation ? not for resale. produced in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: +44-(0)1522-500500 fax: +44-(0)1522-500550 this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regard ing the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information con cerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully deter mine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any me dical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
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